$176,000 – $322,000
Listed on Micron Technology’s own careers site. You apply with them directly — we never stand between you and the employer.
What this role is
Lead the architecture and design of next-generation NAND Flash memory products, balancing innovation with manufacturability across a multi-functional team. This role suits experienced memory design engineers who can drive both the technical vision and the cross-functional collaboration needed to deliver high-performance, energy-efficient solutions from concept to production.
Our summary, not Micron Technology’s wording. The full posting is on their site.
Skills this role names
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What they ask for
Required
- 15+ years of non-volatile memory design experience
- BS, MS, or Ph.D. in Electrical Engineering or related field
- Broad knowledge of NAND Flash memory design
- Understanding of logic, analog, and mixed-signal circuits at full-chip level
- Knowledge of circuit simulators (XA, hspice, hsim/finesim)
- Understanding of semiconductor reliability issues (CHC, NBTI, stress, snapback, EM, IR)
- Knowledge of StarRC/Calibre parasitic extraction and ability to debug extraction issues
Nice to have
- Ability to orchestrate AI tools adoption and deployment
- Understanding of Agentic AI or willingness to learn it
- Strong interpersonal and communication skills
- Experience leading multi-functional teams in project environments