Listed on Micron Technology’s own careers site. You apply with them directly — we never stand between you and the employer.
What this role is
This role focuses on developing and optimizing DRAM cell and device technologies to improve memory density and performance. It suits semiconductor engineers with expertise in device physics who want to work on next-generation memory architectures at a major technology company.
Our summary, not Micron Technology’s wording. The full posting is on their site.
What they ask for
Required
- Master's or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, or related field
- Understanding of semiconductor device physics including MOSFETs, access devices, and capacitors
- Experience in electrical measurement, device evaluation, and data interpretation
- Knowledge of DRAM operation fundamentals such as activation, sensing, and disturb mechanisms
- Proficiency in Python, MATLAB, and JMP
Nice to have
- Ability to communicate experimental results and drive cross-team alignment
- Hands-on experience with DRAM or NAND device development
- Experience with TCAD simulation tools like Synopsys Sentaurus or Silvaco
- Experience in semiconductor device fabrication or advanced BEOL integration
- Knowledge of reliability mechanisms and device variation analysis