Listed on Micron Technology’s own careers site. You apply with them directly — we never stand between you and the employer.
What this role is
This role focuses on developing and validating next-generation DRAM device and cell technologies through electrical characterization, modeling, and reliability analysis. It suits experienced semiconductor engineers with strong device physics knowledge who want to influence memory scaling at an advanced R&D facility.
Our summary, not Micron Technology’s wording. The full posting is on their site.
Skills this role names
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What they ask for
Required
- Master's degree with 5+ years industry experience or PhD with hands-on research in Electrical Engineering, Physics, or related field
- Strong expertise in semiconductor device physics including CMOS and diodes
- Deep knowledge of mainstream memory technologies such as DRAM, NAND, NOR, or SRAM
- Experience with DRAM array characterization and failure analysis
- Proficiency in data analysis, DOE, and statistical techniques
Nice to have
- Strong written and verbal communication skills
- Experience working across process integration and circuit or architecture domains
- Demonstrated ability to collaborate with multi-functional engineering teams
- Proven problem-solving skills and ability to communicate technical status to management