# Engineer- DRAM, Advanced DRAM and EM Device/Cell Technology

Hiring organization: [Micron Technology](https://career.thegoodapps.co/organizations/micron-technology)

Canonical page: https://career.thegoodapps.co/jobs/a6a31747-133e-426d-85b9-00763370d15f

Listed on Micron Technology's own careers site. Applications go to them directly.

- Location: Boise, ID

## Summary

This role focuses on developing and validating next-generation DRAM device and cell technologies through electrical characterization, modeling, and reliability analysis. It suits experienced semiconductor engineers with strong device physics knowledge who want to influence memory scaling at an advanced R&D facility.

_Our summary, not Micron Technology's wording._

## Skills named

Design of Experiments (DOE), Python

## Required

- Master's degree with 5+ years industry experience or PhD with hands-on research in Electrical Engineering, Physics, or related field
- Strong expertise in semiconductor device physics including CMOS and diodes
- Deep knowledge of mainstream memory technologies such as DRAM, NAND, NOR, or SRAM
- Experience with DRAM array characterization and failure analysis
- Proficiency in data analysis, DOE, and statistical techniques

## Nice to have

- Strong written and verbal communication skills
- Experience working across process integration and circuit or architecture domains
- Demonstrated ability to collaborate with multi-functional engineering teams
- Proven problem-solving skills and ability to communicate technical status to management

Apply on Micron Technology's site: https://micron.wd1.myworkdayjobs.com/en-US/External/job/Boise-ID---Main-Site/Engineer--DRAM-DEVICE---CELL-TECHNOLOGY_JR90433